inchange semiconductor product specification silicon npn power transistors MJE13009 description ? ? with to-220c package ? high voltage ,high speed applications ? particularly suited for 115v and 220v switchmode applications such as switching regulators,inverters ,m otor controls,solenoid/ relay drivers and deflection circuits pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 700 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 9 v i c collector current (dc) 12 a i cm collector current-peak 24 a i e emitter current 18 a i em emitter current-peak 36 a i b base current 6 a i bm base current-peak 12 a t a =25 ?? 2 p d total power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.25 ??/w
inchange semiconductor product specification 2 silicon npn power transistors MJE13009 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =10ma; i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =5a; i b =1a 1.0 v v cesat-2 collector-emitter saturation voltage i c =8a ;i b =1.6a t c =100 ?? 1.5 2.0 v v cesat-3 collector-emitter saturation voltage i c =12a; i b =3a 3.0 v v besat-1 base-emitter saturation voltage i c =5a; i b =1a 1.2 v v besat-2 base-emitter saturation voltage i c =8a; i b =1.6a t c =100 ?? 1.6 1.5 v i cev collector cut-off current v cev =rated value, v be(off) =1.5v dc;t c =100 ?? 1.0 5.0 ma i ebo emitter cut-off current v eb =9v; i c =0 1.0 ma h fe-1 dc current gain i c =5a ; v ce =5v 8 40 h fe-2 dc current gain i c =8a ; v ce =5v 6 30 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 4 mhz c ob collector outoput capacitance i e =0; f=0.1mhz ; v cb =10v 180 pf switching times resistive load t d delay time 0.06 0.1 | s t r rise time 0.45 1.0 | s t s storage time 1.30 3.0 | s t f fall time v cc =125v ,i c =8a i b1 =-i b2 =1.6a t p =25 | s duty cycle ? 1% 0.20 0.7 | s
inchange semiconductor product specification 3 silicon npn power transistors MJE13009 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm)
inchange semiconductor product specification 4 silicon npn power transistors MJE13009
inchange semiconductor product specification 5 silicon npn power transistors MJE13009
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